- Titel
- AMC 2015 – Advanced Metallization Conference
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa-206986
- ISBN
- 978-3-944640-97-6
- Abstract (EN)
- Since its inception as the Tungsten Workshop in 1984, AMC has served as the leading conference for the interconnect and contact metallization communities, and has remained at the leading edge of the development of tungsten, aluminum, and copper/low-K interconnects. As the semiconductor industry evolves, exciting new challenges in metallization are emerging, particularly in the areas of contacts to advanced devices, local interconnect solutions for highly-scaled devices, advanced memory device metallization, and 3D/packaging technology. While the conference content has evolved, the unique workshop environment of AMC fosters open discussion to create opportunities for cross-pollination between academia and industry. Submissions are covering materials, process, integration and reliability challenges spanning a wide range of topics in metallization for interconnect/contact applications, especially in the areas of: - Contacts to advanced devices (FinFET, Nanowire, III/V, and 2D materials) - Highly-scaled local and global interconnects - Beyond Cu interconnect - Novel metallization schemes and advanced dielectrics - Interconnect and device reliability - Advanced memory (NAND/DRAM, 3D NAND, STT and RRAM) - 3D and packaging (monolithic 3D, TSV, EMI) - Novel and emerging interconnects Executive Committee: Sang Hoon Ahn (Samsung Electronics Co., Ltd.) Paul R. Besser (Lam Research) Robert S. Blewer (Blewer Scientific Consultants, LLC) Daniel Edelstein (IBM) John Ekerdt (The University of Texas at Austin) Greg Herdt (Micron) Chris Hobbs (Sematech) Francesca Iacopi (Griffith University) Chia-Hong Jan (Intel Corporation) Rajiv Joshi (IBM) Heinrich Koerner (Infineon Technologies) Mehul Naik (Applied Materials Inc.) Fabrice Nemouchi (CEA LETI MINATEC) Takayuki Ohba (Tokyo Institute of Technology) Noel Russell (TEL Technology Center, America) Stefan E. Schulz (Chemnitz University of Technology) Yosi Shacham-Diamand (Tel-Aviv University) Roey Shaviv (Applied Materials Inc.) Zsolt Tokei (IMEC)
- Andere Ausgabe
- Advanced Metallization Conference
Link: http://www.advancedmetallizationconference.com - Freie Schlagwörter (DE)
- Metallisierung
- Freie Schlagwörter (EN)
- metallization, interconnects, low-k dielectrics, reliability, simulation, integrated circuits, 3D integration
- Klassifikation (DDC)
- 620
- Normschlagwörter (GND)
- Metallisieren, Low-k Dielektrikum, Zuverlässigkeit, Simulation, Integrierte Schaltung
- HerausgeberIn
- Prof. Dr.-Ing. Stefan E. Schulz
- Herausgeber (Institution)
- Technische Universität Chemnitz
- Verlag
- Universitätsverlag der Technischen Universität Chemnitz, Chemnitz
- URN Qucosa
- urn:nbn:de:bsz:ch1-qucosa-206986
- Veröffentlichungsdatum Qucosa
- 22.07.2016
- Dokumenttyp
- Konferenzband
- Sprache des Dokumentes
- Englisch
- Process Window Challenges in Advanced Manufacturing: New Materials and Integration Solutions
- Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM
- A Study of Tungsten Metallization for the Advanced BEOL Interconnections
- Self-aligned graphene on silicon substrates as ultimate metal replacement for nanodevices
- Organosilane Downstream Plasma On Ultra Low-k Dielectrics: Comparing Repair With Post Etch Treatment
- Porous Ultra Low-k Material Integration Through An Extended Dual Damascene Approach: Pre-/ Post-CMP Curing Comparison
- NiCo 10 at%: A promising silicide alternative to NiPt 15 at% for thermal stability improvement in 3DVLSI integration
- Area Selective Deposition of Ultrathin Magnetic Cobalt Films via Atomic Layer Deposition
- Growth of Ultra-thin Ruthenium and Ruthenium Alloy Films for Copper Barriers
- Surface planarization of Cu and CuNiSn Micro-bumps embedded in polymer for below 20μm pitch 3DIC applications
- SAMs (self-assembled monolayers) passivation of cobalt microbumps for 3D stacking of Si chips
- Behavior of Copper Contamination for Ultra-Thinning of 300 mm Silicon Wafer down to <5 μm
- Requirements and challenges on an alternative indirect integration regime of low-k materials
- A Study on Mechanical Structure of a MEMS Accelerometer Fabricated by Multi-layer Metal Technology
- Low-k SiCxNy Etch-Stop/Diffusion Barrier Films for Back-End Interconnect Applications
- FEA to Tackle Damage and Cracking Risks in BEoL Structures under Copper Wire Bonding Impact
- Processing Effect on Via Extrusion for Through-Silicon Vias (TSVs) in 3D Interconnects: A Comparative Study of Two TSV Structures
- Characterization and Process Development of CVD/ALD-based Cu(Mn)/Co(W) Interconnect System