- AutorIn
- Hani Muhsen
- Titel
- Three-Phase Voltage Source Inverter with Very High Efficiency Based on SiC Devices
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa-199329
- Datum der Einreichung
- 10.11.2015
- Datum der Verteidigung
- 25.02.2016
- Abstract (EN)
- This dissertation aims at designing a three-phase voltage source inverter based on the SiC devices and mainly the SiC-MOSFET. The designed inverter offers a possibility to drive the power inverter with a very high efficiency, which can reach up to 99% for 16 kW rated power. The design is dedicated to the electric vehicle application, and it aims at • Providing a comparative study on some of the current discrete SiC devices in terms of the total losses and the thermal conductivity. In addition, a behavioral study of the effective channel mobility with temperature variation in the SiC MOSFET will be investigated. • Designing a gate driver which fits with the driving requirements of the SiC-MOSFET and provides a trade-off between the switching losses and the EMI behavior. • Designing a three-phase voltage source inverter with 16 kW rated power; the design includes minimizing the inverter losses and extracts the EMI model of the power inverter by considering the effects of the parasitic parameters; moreover a short guideline for selecting the heat-sink based on the static network is introduced. • Proposing a new and simplified carried-based PWM, this will reduce the harmonics in the output waveforms and enhance the utilization of the DC-link voltage. • Proposing a new strategy for compensating the dead-time effect in carrier based-PWM and to find out the proper dead-time level in VSI based on SiC –MOSFET. • Designing faults diagnosis and protection circuits in order to protect the power inverter from the common faults; overcurrent, short-circuit, overvoltage, and overtemperature faults.
- Freie Schlagwörter (DE)
- SiC-Geräte, Wechselrichter, hohe Effizienz, Elektromagnetische Interferenz, Steuerungstopologien
- Freie Schlagwörter (EN)
- SiC Devices, Inverter, Efficiency, VSI, EMI, Control Topologies
- Klassifikation (DDC)
- 620
- Normschlagwörter (GND)
- Wechselrichter, Effizienz, Interferenz
- GutachterIn
- Prof. Dr. Ing Mario Pacas
- BetreuerIn
- Prof. Dr. Ing Josef Lutz
- Den akademischen Grad verleihende / prüfende Institution
- Technische Universität Chemnitz, Chemnitz
- URN Qucosa
- urn:nbn:de:bsz:ch1-qucosa-199329
- Veröffentlichungsdatum Qucosa
- 17.03.2016
- Dokumenttyp
- Dissertation
- Sprache des Dokumentes
- Englisch