- AutorIn
- Seok-Woo Hong
- Seung-Mo Kang
- In-Hyuk Choi
- Seung-Uk Jung
- Dong-Sik Park
- Kyoung-Ho Kim
- Yong-Jin Choi
- Tae-Woo Lee
- Haebum Lee
- In-Soo Cho
- Titel
- Novel Double-Deposited-Aluminum (DDA) Process for Improving Al Void and Refresh Characteristics of DRAM
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa-207014
- Quellenangabe
- AMC 2015 – Advanced Metallization Conference
- Quellenangabe
- AMC 2015 – Advanced Metallization Conference
- Abstract (EN)
- In order to resolve the Al void formation originated from the severe stress issues in dynamic random access memory (DRAM), double-deposited-aluminum (DDA) layer process was proposed. This novel metallization process can be effectively and simply performed with the native oxide such as Al 2 O 3 between upper and lower Al metal layer by ex-situ deposition technique. We could effectively control the Al void by adapting the DDA layers with different grain structure. From this novel metallization process, we have confirmed the optimal thickness of Al barrier metal to 100Å to be free from Al voids, which makes it possible to improve the static refresh characteristics of DRAM by 17%.
- Freie Schlagwörter (EN)
- DRAM, refresh characteristics, DDA (Double Deposited Al), Al void, stress migration
- Klassifikation (DDC)
- 620
- Normschlagwörter (GND)
- Dynamisches RAM
- Publizierende Institution
- Technische Universität Chemnitz, Chemnitz
- URN Qucosa
- urn:nbn:de:bsz:ch1-qucosa-207014
- Veröffentlichungsdatum Qucosa
- 22.07.2016
- Dokumenttyp
- Konferenzbeitrag
- Sprache des Dokumentes
- Englisch