- AutorIn
- Himamshu Nallan
- Thong Ngo
- Agham Posadas
- Alexander Demkov
- John Ekerdt
- Titel
- Area Selective Deposition of Ultrathin Magnetic Cobalt Films via Atomic Layer Deposition
- Zitierfähige Url:
- https://nbn-resolving.org/urn:nbn:de:bsz:ch1-qucosa-207142
- Quellenangabe
- AMC 2015 – Advanced Metallization Conference
- Quellenangabe
- AMC 2015 – Advanced Metallization Conference
- Abstract (EN)
- The work investigates the selective deposition of cobalt oxide via atomic layer deposition. Methoxysilanes chlorosilane and poly(trimethylsilylstyrene) self-assembled monolayers are utilized to prevent wetting of water and cobalt bis(N-tert butyl, N'-ethylpropionamidinate) from the substrate, thereby controlling nucleation on the substrate and providing a pathway to enable selective deposition of cobalt oxide. Sr and Al are deposited atop the oxide films to scavenge oxygen and yield carbon-free cobalt metal films. Thermal reduction of the oxide layer in the presence of CO and H 2 was also investigated as an alternative. Finally, we demonstrate control over the tunability of the coercivity of the resultant films by controlling the reduction conditions.
- Freie Schlagwörter (EN)
- area-selective, atomic layer deposition, thin-film, ferromagnetic, memory
- Klassifikation (DDC)
- 620
- Normschlagwörter (GND)
- Atomlagenabscheidung, Dünne Schicht, Cobalt, Ferromagnet, Speicher
- Publizierende Institution
- Technische Universität Chemnitz, Chemnitz
- URN Qucosa
- urn:nbn:de:bsz:ch1-qucosa-207142
- Veröffentlichungsdatum Qucosa
- 22.07.2016
- Dokumenttyp
- Konferenzbeitrag
- Sprache des Dokumentes
- Englisch